Title:
MANUFACTURE OF GROUP III NITRIDE SEMICONDUCTOR LIGHT EMITTING ELEMENT
Document Type and Number:
Japanese Patent JP3461074
Kind Code:
B2
Abstract:
PROBLEM TO BE SOLVED: To immobilize Mg as acceptor impurities, by including a junction formation process of forming pn junction including the crystal layer of a group αIII nitride semiconductor by adding group II elements, a process of forming an electrode on the crystal layer, and a field application and heating process of heating the pn junction into the specified temperature range, and forming an electric field which crosses the pn junction through the electrode.
SOLUTION: An AlN buffer layer 2, on a substrate 1, and an Si-doped n-type GaN layer 3, thereon, are made. Organic Mg gas is introduced within a growth furnace to form an Mg-doped GaN layer 4 and form pn junction. Hereon, an SiO2 protective film 6 is made, and it is partially removed, and an electrode hole is made, and Ti and Al are stacked to form an electrode 5A. Pd is deposited to the section where the layer 4 is exposed, and an electrode 5B, and thereon, after heating, an Al are stacked to form an electrode 5C. Within the Mg-doped GaN layer 4, hydrogen originated from NH3 used as group III material meets Mg, and forms a kind of complex of Mg-H, whereby it can be immobilized as an acceptor impurity.
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Inventors:
Mamoru Miyaji
Toshiyuki Tanaka
Yoshinori Kimura
Hirokazu Takahashi
Hitoshi Sato
Watanabe On
Hiroyuki Ohta
Akazaki Isamu
Hiroshi Amano
Toshiyuki Tanaka
Yoshinori Kimura
Hirokazu Takahashi
Hitoshi Sato
Watanabe On
Hiroyuki Ohta
Akazaki Isamu
Hiroshi Amano
Application Number:
JP32299295A
Publication Date:
October 27, 2003
Filing Date:
December 12, 1995
Export Citation:
Assignee:
Pioneer Corporation
International Classes:
H01L33/12; H01L33/32; H01L33/36; H01S5/00; H01S5/323; (IPC1-7): H01L33/00; H01S5/323
Domestic Patent References:
| JP5119985A | ||||
| JP758043A | ||||
| JP637357A | ||||
| JP7254733A | ||||
| JP5183489A | ||||
| JP6232450A | ||||
| JP5315647A | ||||
| JP832115A |
Other References:
【文献】Jpn.J.Appl.Phys.,1999年,Vol.38 Part2, No.11A,L1237-L1239
Attorney, Agent or Firm:
Motohiko Fujimura