PURPOSE: To reduce dark current and to increase a bright/dark current ratio, by forming a transparent insulating layer on an a-Si:H layer, opening a diode forming part as a window, and forming a common transparent electrode on the transparent insulating layer.
CONSTITUTION: Discrete electrodes 2 are formed on an insulating substrate 1 as films by a vacuum evaporation method. An electrode pattern is formed by a photoetching technology. An a-Si:H layer 3 is formed by a plasma chemical vapor growth method. Thereafter, the pattern of an image sensor is formed by the photoetching technology. Then an a-SiNx film is formed by a P-CVD method. Thereafter, a transparent insulating layer 5 comprising a-SiNx, in which a photodiode forming part 6 of an photoelectric element is opened as a window, is patterned and formed. A common transparent electrode 4 is formed by a mask evaporation method.
MISHIMA YASUYOSHI
SOEDA SHINICHI
KUSAKAWA SUSUMU
