PURPOSE: To provide an individual diode device where film resistors are con nected, by forming a second conductivity type of diffusion area on the epitaxial layer on a semiconductor substrate, and forming a film resistor on the oxide film in the area other than a diffusion area, and dividing a board after forming the metallic film on the rear of the board, on and at the side of this one end.

CONSTITUTION: The same conductivity of N layer 11 is epitaxially grown on a semiconductor substrate 10. A silicon oxide film 13 is made on this surface, and an opening is bored in the specified position, and then a p layer 12 is made by diffusion through a window. Then, a polysilicon film is grown on the surface of the oxide film, and it is patterned to get a film resistor 15. Furthermore, a metallic film of aluminum or the like is deposited on the surface, and electrodes 14 and 14' are patterned on one end of the film resistor and the other end of the film resistor and on the topside of the p layer 12, and also an electrode of the same material is made on the rear of the board, too, and then the wafer is scribed and divided into pellets. Accordingly, a pellet where a resistor is connected to the diode can be made.