Title:
MANUFACTURE OF INP AVALANCHE PHOTODIODE
Document Type and Number:
Japanese Patent JPH03126269
Kind Code:
A
Abstract:
PURPOSE:To improve characteristics and reproducibility and also a yield by conducting annealing at a specified temperature and for a specified time after implantation of Be ions in an InP layer. CONSTITUTION:An n<-> InP layer 2 is formed on an n<+> InP substrate 1, and in an n<-> InP layer 3 formed thereon, Be ions are implanted in the shape of a ring surrounding a light-sensing region of APD, with a resist pattern 4 used as a mask, so as to form a girdling 5. Thereafter a water is annealed to acti vate Be, the time for annealing being set to be five hours or longer at a tempera ture of 700 deg.C approximately. A much higher breakdown voltage can be attained for the girdling when the annealing is executed for a longer time. As for the ion-implanted Be, a p-n junction is formed only of a later component in the long-time annealing. Thereby a depth is made easy to control and a high reproducibility is attained.
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Inventors:
ISHIMURA EITARO
Application Number:
JP26701189A
Publication Date:
May 29, 1991
Filing Date:
October 12, 1989
Export Citation:
Assignee:
MITSUBISHI ELECTRIC CORP
International Classes:
H01L31/107; H01L29/861; (IPC1-7): H01L29/90; H01L31/107
Domestic Patent References:
| JPS61144077A | 1986-07-01 | |||
| JPS59106165A | 1984-06-19 |
Attorney, Agent or Firm:
Kaneo Miyata (3 outside)
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