PURPOSE: To improve the electrical characteristics of a junction type field effect semiconductor device by a method wherein the cross sectional area of the current path of the current flowing through a semiconductor layer is controlled by the depletion layer extending from the P-N junction to the semiconductor layer side.
CONSTITUTION: Regions 17 and 18 under conductive metal layers 13 and 14 on a semiconductor layer 2 are used as a source region and a drain region respectively, portions between adjacent semiconductor regions 10 in the semiconductor layer 2 and regions 19 outside the semiconductor regions on the outside in the arrangement of a plurality of semiconductor regions 10 are used as current regions, and conductive metal layers 13, 14 and 9 as source, drain and gate electrodes respectively. With current flowing via the conductive metal layers 13 and 14 as the source and drain electrodes and through the region 19 as the current path region into the semiconductor layer 2, applying between the conductive metal layers 9 and 13 a control voltage of polarity opposite to a P-N junction 11 permits the cross sectional area of the path of the current flowing through the region 19 to be controlled.
ISHII YASUNOBU
KURUMADA KATSUHIKO
| JPS5273681A | 1977-06-20 | |||
| JPS5219975A | 1977-02-15 |