MANUFACTURE OF LAMINATED SOI SUBSTRATE

Japanese Patent JP3563144

B2

PURPOSE: To increase the bonding strength of the laminated surface of a laminated SOI substrate by a method wherein the SOI substrate is subjected to oxidation treatment in a high-temperature oxygen atmosphere to grow a buried oxide film and the interface between a surface active silicon layer and the buried oxide film is moved from the laminated surface of the SOI substrate and formed.
CONSTITUTION: A surface oxidation single crystal silicon substrate 2 is laminated to a single-crystal silicon substrate 1 and a buried oxide film 5 is provided by bonding together the substrates 2 and 1. Then, the surface, which faces the side of the substrate 1, of the substrate 2 is polished to form a SOI substrate 6 which uses this polished surface as a surface active silicon layer 4. The SOI substrate 6 is subjected to oxidation treatment in a high-temperature oxygen atmosphere to grow the film 5 and the interface between the layer 4 and the film 5 is moved from the laminated surface of the substrate 6 and is formed. Thereby, the bonding strength of the laminated surface of the SOI substrate can be increased to a strength equal with that of a bulk material.

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Sadao Nakajima
Tatsuhiko Katayama

JP5181895A

September 08, 2004

February 16, 1995

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Komatsu Electronic Metal Co., Ltd.
NT Electronics Co., Ltd.

H01L27/12; H01L21/02; (IPC1-7): H01L27/12; H01L21/02

JP6338604A

Yuichi Murakami
Okubo Misao

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