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Patent Searching and Data


Title:
MANUFACTURE OF LIMIT CURRENT TYPE OXYGEN SENSOR
Document Type and Number:
Japanese Patent JPH04118553
Kind Code:
A
Abstract:

PURPOSE: To obtain a sensor wherein solid electrolyte is effectively form in a thin film by forming a solid electrolyte thin film to cover an electrode on a silicon substrate and then making the silicon substrate porous by means of anode formation to form a diffusion limiting member.

CONSTITUTION: After a solid electrolyte thin film is deposited to cover an electrode formed on a silicon substrate, the silicon substrate is made porous by means of anode formation to have a diffusion limiting member formed while an electrode is formed also on the solid electrolyte thin film. By thus depositing the solid electrolyte on the silicon substrate before it is made porous, a dense solid electrolyte thin film can be formed while a porous body having uniform hole diameters with goods repeatability can be obtained by means of the anode formation, whereby a sensor with uniform characteristics can be obtained.


Inventors:
YAMADA TAKESHI
Application Number:
JP23848490A
Publication Date:
April 20, 1992
Filing Date:
September 07, 1990
Export Citation:
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Assignee:
NOK CORP
International Classes:
G01N27/41; (IPC1-7): G01N27/41
Attorney, Agent or Firm:
Toshio Yoshida