PURPOSE: To contrive the maintenance and expansion of the transfer margin of an element by a method wherein ions are implanted into the desired parts of a thin film for magnetic bubble and the distortion of the implantation layer is decreased or mitigated by irradiating laser light at least at a part of the ion implantaion layer.
CONSTITUTION: Ions 1 with a strength of Ne+ 180keV, 2×1014/cm2 are implanted on the whole face of a film 4 consisting of [YSmLu(a)3][FeGe]5O12 which can maintain a bubble diameter of about 1μm. Furthermore, H+2 is formed as 100keV, 4×1016/cm2 and is implanted to direct the magnetization 7 on the surface to the inside of a film face. Next, a Cr pattern 3 with a thickness of 500 is formed on the part locating surface magnetization in the film face and CW mode Ar laser is irradiated on the whole face including the Cr pattern 3 while maintaining an output of 4W/100μm. In this way, the distortion at the part inrradiated by laser is eliminated and the easy magnetizing axis of the surface magnetization 7 is maintained at vertical to the film 4 and bias magnetic field margin of 10% or more is obtained when rotary magnetic field is 500e.
SUZUKI MAKOTO
SUGITA KEN
UMEZAKI HIROSHI
