PURPOSE: To enable to realize a shallow junction and a low resistant source- drain region by forming a source-drain diffused layer by the diffusion of an impurity from a metallic silicide film.

CONSTITUTION: The part on an Si substrate 11 is divided into a field region 13 and an active region 14 by selectively forming a field oxide film 12 on the surface of the Si substrate 11. Next, the metallic silicide film 15 due to a wiring is formed over the entire surface of the Si substrate, the impurity (e.g. As) which is diffused to the source-drain diffused layer is implanted over the entire surface of the Si substrate by ion implantation so as to remain in the metallic silicide film 15. Then, the metallic silicide film 15 is etched only at the gate part by photodetecting method, thus exposing the surface of the Si substrate 11, and then a wiring 16 is formed. A gate oxide film 17 is formed at the gate part by dry oxidation. At this time, the impurity is diffused from the inside of the metallic silicide film 16, accordingly the source-drain region 18 is formed. Thereafter, a gate electrode 19 is formed, resulting in the formation of a transistor.