Title:
MANUFACTURE METHOD FOR III NITRIDE-BASED COMPOUND SEMICONDUCTOR ELEMENT
Document Type and Number:
Japanese Patent JP2001230447
Kind Code:
A
Abstract:
To relax the lattice mismatching between a substrate and an n-contact layer and to enhance the crystallinity of a III nitride-based compound semiconductor layer.
A first semiconductor layer which is composed of AlxGayIn1-x-yN (where 0≤x≤1, 0≤y≤1 and 0≤x+y≤1) is grown between the substrate and the n-contact layer by an MOCVD method at a growth temperature of 1000 to 1180°C while its lattice contact is changed.
Inventors:
TAKI TETSUYA
ASAI MAKOTO
ASAI MAKOTO
Application Number:
JP2000037381A
Publication Date:
August 24, 2001
Filing Date:
February 16, 2000
Export Citation:
Assignee:
TOYODA GOSEI KK
International Classes:
H01L21/205; H01L33/06; H01L33/12; H01L33/32; H01L33/42; H01S5/323; H01S5/343; (IPC1-7): H01L33/00; H01L21/205; H01S5/323
Attorney, Agent or Firm:
Konishi Fumiya