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Title:
MANUFACTURE METHOD OF POROUS SILICON OXIDE POWDER
Document Type and Number:
Japanese Patent JP2007099621
Kind Code:
A
Abstract:

To provide a manufacture method of a porous silicon oxide powder that has high activity, excels in handling nature, and for this reason, that can be used for the application usefully.

The manufacture method of the porous silicon oxide powder comprises: heating a mixed raw material powder at least including a silicon dioxide powder at 1,100-1,600°C of a temperature range under inert gas or vacuum pressure; generating silicon oxide gas; and making the silicon oxide gas deposit on a cooled base body surface, wherein the temperature on the base body surface is 100-400°C, the concentration of the silicon oxide gas vapor is 0.5-15g/m3, the pore mean diameter is 0.5-20 nm, the pore volume is 0.005-0.2 cm3/g, and the BET specific surface area is 5-300 m2/g.


Inventors:
FUKUOKA HIROFUMI
ARAMATA MIKIO
UENO SUSUMU
MOMII KAZUMA
MIYAWAKI SATORU
Application Number:
JP2007009975A
Publication Date:
April 19, 2007
Filing Date:
January 19, 2007
Export Citation:
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Assignee:
SHINETSU CHEMICAL CO
International Classes:
C01B33/113
Domestic Patent References:
JP2001226112A2001-08-21
JP2001220125A2001-08-14
Attorney, Agent or Firm:
Takashi Kojima
Saori Shigematsu
Katsunari Kobayashi
Takeshi Ishikawa