Title:
MANUFACTURE OF MICROCHIP OF FIELD EMISSION ELEMENT
Document Type and Number:
Japanese Patent JP3170679
Kind Code:
B2
Abstract:
PROBLEM TO BE SOLVED: To manufacture a microchip of a field emission element accurately with uniform shape.
SOLUTION: An oxide film 23 on a silicon substrate 21 is patterned, and using it as a mask, an impurity layer 24 is formed in the silicon substrate 21. Using a solution of hydrofluoric acid as an electrolytic solution, only the impurity layer 24 of a high concentration is formed in a porous silicon layer 25 through positive electrode reactions, and the obtained porous silicon layer 25 is oxidated at a high temp. so that precise microchips 22 are manufactured uniformly.
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Inventors:
Theoksuri
Application Number:
JP30911696A
Publication Date:
May 28, 2001
Filing Date:
November 20, 1996
Export Citation:
Assignee:
ELGE SEMICON Company Limited
International Classes:
H01J17/49; H01J9/02; H01L29/66; (IPC1-7): H01J9/02; H01L29/66
Attorney, Agent or Firm:
Fumio Sasashima (1 person outside)
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