To provide a microelectrode manufacturing method capable of manufacturing an efficient microelectrode by making a simple manufacturing process.
The method has a process for etching a part of a semiconductor layer for forming an element and a part of an insulated film for an SOI on an SOI substrate, a process forming a semiconductor growing layer 4 on the surface of the SOI substrate by using an epitaxial growing device, a process for forming a wiring layer provided with a through electrode 6b and a pad 6a on the surface of an insulated film after forming the film on the surface of the layer 4 and a process for removing a semiconductor layer for a base being the rear surface of the microelectrode after then through the use of selective etching technique and then forming the supporting table 9 of the microelectrode by etching a part of the layer 1c and a part of the layer 4.
SAITO TOSHIO
KAWAGUCHI SHINJI
MORIYA SATOSHI
HORIUCHI MITSUAKI
TANABE SHINICHI
NODA HIDEO
HITACHI ULSI SYS CO LTD