Title:
MANUFACTURE OF MOS TRANSISTOR
Document Type and Number:
Japanese Patent JP3459050
Kind Code:
B2
Abstract:
PURPOSE: To effectively incorporate chromium into a silicon oxide film when manufacturing a MOS transistor which contains chromium in the silicon oxide film.
CONSTITUTION: Chromium is made to, exist on the surface of a silicon substrate 1 by bringing inorganic solution or organic solution which contains chromium 1000ppm or under in concentration into contact with the surface of a silicon substrate 1, and then chromium is incorporated into the silicon oxide film 4 by the thermal oxidation of the silicon substrate 1. Accordingly, there is practically no deterioration of the insulation of the silicon film by making the silicon oxide film contain chromium effectively, and besides the deterioration of the electric property within the silicon substrate scarcely occurs, and a MOS transistor which can control the threshold voltage can be manufactured easily.
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Inventors:
Makoto Takiyama
Application Number:
JP18277494A
Publication Date:
October 20, 2003
Filing Date:
July 12, 1994
Export Citation:
Assignee:
Unihua Electronics Co., Ltd.
International Classes:
H01L29/78; H01L21/225; H01L21/265; H01L21/316; (IPC1-7): H01L29/78; H01L21/225; H01L21/265; H01L21/316
Domestic Patent References:
| JP4736855A | ||||
| JP60183731A | ||||
| JP5092087A | ||||
| JP50126177A |
Attorney, Agent or Firm:
Koetsu Kokubun
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