MANUFACTURE OF MULTILAYER INTERCONNECTION MEMBER

Japanese Patent JPS6050941

A

PURPOSE:To contrive the improvement of the reliability of the titled member and the improvement of the integration degree by a method wherein a connection hole is formed in an insulation film provided between wirings of two layers upper and lower by means of a resist of the inverted trapezoidal form in cross- section. CONSTITUTION:A semiconductor element is formed in a semiconductor substrate 1. Next, the insulation film 2 is formed over the entire surface. Then, after the connection hole is formed in the film 2, wirings 3A and 3B are formed on the film 2. The reverse trapezoidal resist 4 is formed on the layer 3A. The insulation film 5 to be almost flattened is formed over the entire surface. The film 5 is exposed in the upper surface part in such a manner that the upper surface part of the resist 4 exposes. The resist 4 is removed, and the connection hole 6 is formed above the wiring 3A. Since this connection hole 6 is formed faithfully to the shape of the resist, the adhesion property of the second layer wiring 7 formed in a later process improves. The wiring 7 is formed on the film 5 via connection hole 6. Thereby, the reliability of this member improves, and the unnecessary enlargement of dimensions of the hole 6 can be prevented, and accordingly the improvement of the integration degree is enabled.

TAKAHASHI TAKAHIKO
KOIDE TAKAO
KURODA SHIGEO

JP15787183A

March 22, 1985

August 31, 1983

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HITACHI LTD
HITACHI MICROCUMPUTER ENG

H01L21/3213; H01L21/302; H01L21/3065; (IPC1-7): H01L21/302

Akio Takahashi

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