To manufacture a non-single crystal silicon thin film of large mobility and particle size which is suitable for forming a high-performance polycrystalline silicon thin film transistor, related to a method for manufacturing a non-single crystal silicon thin film.

A non-single crystal silicon film 2 is formed on the surface of a non-single crystal silicon substrate 1, the surface of the non-single crystal silicon film 2 is flattened, an ion is implanted from a flattened surface side, then it is laminated to a substrate 3 which is transparent to a visible light with the flattened side facing it, and the non-single crystal silicon substrate 1 is peeled off an ion implantation surface 5 so that a non-single crystal silicon thin film 8 remains on the transparent substrate 3.