PURPOSE: To improve film quality, and realize excellent ferroelectricity wherein orientation to a substrate is sufficient, by performing heat treatment in the state that an electric field is applied to a ferroelectric thin film.
CONSTITUTION: A ferroelectric substance thin film element 5 having a film structure wherein a ferroelectric substance thin film is sandwiched by electrodes is fixed on a substrate holder made of quartz in a chamber 1, the inside of the chamber 1 is vacuumized from an exhaust went with a vacuum pump, oxygen gas is introduced from a gas feeding port 8, and constant gas pressure is kept. Electric field of 2-5V is applied to the ferroelectric substance thin film element 5, infrared radiation from an infrared lamp 3 for heating is converged on the ferroelectric substance thin film element 5 via a window 2 made of quartz by using an infrared radiation reflecting mirror, and the temperature of the ferroelectric substance thin film element 5 is kept at 600-700°C.
USHIKUBO MAHO
HAMADA KAZUYUKI
OTANI NOBORU
