Title:
MANUFACTURE OF PHOTOELECTRIC CONVERSION SEMICONDUCTOR DEVICE
Document Type and Number:
Japanese Patent JPS60113476
Kind Code:
A
Abstract:
PURPOSE:To prevent the damage of a photo transmitting conductive film by a method wherein the upper surface of an amorphous semiconductor is provided with a conductor or an insulator of heat resistance and low thermal conductivity, which are then used as a mask, and the semiconductor thereunder is selectively removed by the laser scribing system. CONSTITUTION:The photo transmitting conductive film is formed over the upper surface of a photo transmitting substrate 1. The first open groove 13, a scribe line, is formed by scanning an irradiation laser beam, and the second electrodes 2 are produced at respective element regions 31 and 11. A non single crystal semiconductor layer 3 generating electromotive force by photo irradiation is formed on the electrodes and the open groove. Further, a film 4 containing chromium as the main constituent is produced thereon. The second open groove 18 is formed over the left direction of the first open groove. Moreover, conductive oxide films 45 and 45' are formed, and the third open groove 20 is provided, resulting in the formation of the second electrode 6 and a joint 30. With such a construction, the element 31 can be formed normally without short by polycrystallization in the periphery of the third groove on the semiconductor side.
Inventors:
YAMAZAKI SHIYUNPEI
Application Number:
JP22117183A
Publication Date:
June 19, 1985
Filing Date:
November 24, 1983
Export Citation:
Assignee:
HANDOTAI ENERGY KENKYUSHO
International Classes:
H01L31/04; H01L21/302; H01L27/142; (IPC1-7): H01L31/04
Domestic Patent References:
| JPS5753986A | 1982-03-31 |