Title:
MANUFACTURE OF PIEZOELECTRIC DISPLACEMENT ELEMENT
Document Type and Number:
Japanese Patent JPH04184985
Kind Code:
A
Abstract:
PURPOSE:To obtain a piezoelectric displacement element having a large displacement quantity by providing a cantilever and electric circuit on a semiconductor chip and forming a continuous pattern by piling up piezoelectric thin films and electrodes. CONSTITUTION:An MOSIC which is gate oxidized to a prescribed extent is provided on an n-type Si substrate cut along the orientation (100). An a-SiN film 6 is formed by a plasma CVD method, etc., at a cantilever forming position. Then a bimorph constitution is constructed by successively piling up Pt electrodes and piezoelectric thin films 8 of Pb(Zr0.9Ti0.1)O3 by an RF magnetron sputtering method, etc., and an oxide film is removed from a connecting area by patterning the film by Ar ion milling. After the oxide film is removed, electrodes 9 are formed by patterning wiring. After an a-SiN film is formed as a protective layer 10 by a plasma CVD method and patterning and etching the layer 10, the cantilever is finally formed by performing anisotropic etching on the Si substrate with a KOH solution.
Inventors:
KASANUKI YUJI
YAMAMOTO KEISUKE
SUZUKI YOSHIO
YAMAMOTO KEISUKE
SUZUKI YOSHIO
Application Number:
JP31269990A
Publication Date:
July 01, 1992
Filing Date:
November 20, 1990
Export Citation:
Assignee:
CANON KK
International Classes:
H01L41/08; G01Q10/02; G01Q10/04; G01Q60/16; G01Q60/38; H01L27/22; H01L41/09; (IPC1-7): H01L27/22; H01L41/08; H01L41/09
Attorney, Agent or Firm:
Yoshio Toyota (1 outside)