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Title:
MANUFACTURE OF POLYCRYSTALLINE SILICON OF LARGE GRAIN SIZE
Document Type and Number:
Japanese Patent JPH11274537
Kind Code:
A
Abstract:

To make the grain size large by a simple apparatus by gradually cooling a molten Si to precipitate a crystal from below with applying a measure field to the Si.

A crucible 3 for melting Si must be made of a material durable enough to the temp. of the molten Si, without reacting with Si, has pref. a conical bottom shape. A crystal first precipitates at the bottom of the crucible 3 and those in the initial stage mostly have small grain sizes. Hence a crucible having a larger bottom area provides a high productivity of Si of smaller grain sizes. By making conical, the productivity of small-grain size Si can be reduced. The type of heater 4 for heating is not limited but usually a carbon heater is energized by a d-c current to heat. Orientation of the applied magnetic field is not limited and may be horizontal or vertical.


Inventors:
TERAJIMA KAZUTAKA
ASABA MASASHI
MAEJIMA YOSHIBUMI
KAWASAKI KOICHI
Application Number:
JP9538198A
Publication Date:
October 08, 1999
Filing Date:
March 24, 1998
Export Citation:
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Assignee:
TOKYO DENSHI YAKIN KENKYUSHO
JAPAN SCIENCE & TECH CORP
International Classes:
H01L31/04; C30B30/04; H01L21/208; (IPC1-7): H01L31/04; C30B30/04; H01L21/208
Attorney, Agent or Firm:
Sasa Kozo