PURPOSE: To decrease the moisture, solvent, and neutralizer in a resist film, and to decrease the tackiness of a photosensitive resist film thereby facilitating separation of a pattern mask film so as to decrease inferiority generation rate of a circuit by executing additionally a process of performing electroosmosis by soaking a photosensitive resist film, formed through electrodeposition coating, in water and applying voltage.
CONSTITUTION: A photosensitive resist film is formed by electrodeposition coating, and then electroosmosis is done by applying voltage again in liquid mainly composed of water so as to remove water, solvent, and neutralizer from the resist film so as to tighten the film. As compared with the resist film being electrodeposited at the first stage, the tackiness with a pattern mask film is remarkably improved, and slickness becomes excellent, and automatic mounting of the film becomes possible, and inferiority on the pattern is remarkably improved.
FUKAWA KIYOHIDE
AKIYAMA ATSUSHI
MORI RIICHI
YOSHIKAWA YUTAKA
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