Title:
MANUFACTURE OF SCHOTTKY BARRIER DIODE
Document Type and Number:
Japanese Patent JPS5578578
Kind Code:
A
Abstract:
PURPOSE: To increase dielectric strength and to decrease the current in the reverse direction by selectively forming a barrier metal layer on one main surface of a silicon substrate and then simultaneously forming a protecting film and a metal-silicon alloy layer on the main surface of the substrate.
CONSTITUTION: An n--layer 11b and an N++-layer 5 are formed on both surfaces of an n+ silicon substrate 1a, and a barrier metal layer 23 is deposited on the top surface. Then, an silicon oxide layer 12' and a sintered layer 13 of a barrier-metal silicon are simultaneously formed, and a window is opened through the silicon oxide layer 12'. Then, an electrode metal layer 14' is evaporated so that it is larger than the barrier metal layer 23.
Inventors:
WATANABE KAZUO
KATOU MINORU
IMADA SHIYOUHEI
MIYAGAWA SHIGERU
KATOU MINORU
IMADA SHIYOUHEI
MIYAGAWA SHIGERU
Application Number:
JP15196978A
Publication Date:
June 13, 1980
Filing Date:
December 11, 1978
Export Citation:
Assignee:
TOKYO SHIBAURA ELECTRIC CO
International Classes:
H01L29/872; H01L29/47; (IPC1-7): H01L29/48; H01L29/91