MANUFACTURE OF SCHOTTKY BARRIER TYPE FIELD EFFECT TRANSISTOR

Title:

MANUFACTURE OF SCHOTTKY BARRIER TYPE FIELD EFFECT TRANSISTOR

Document Type and Number:

Japanese Patent JPS6010787

Kind Code:

A

Abstract:

PURPOSE: To prevent a disconnection while forming a MESFET by a simple manufacturing process by laminating and shaping a protective film and a mask layer on a substrate, forming source and drain regions through the mask layer and the protective film and thermally treating the whole.

CONSTITUTION: A protective film 8 and a mask layer 11 are laminated and formed on the surface of a substrate 1, and ions are implanted continuously through the mask layer 11 and the protective film 8 to shape an N layer 12. Source-drain regions 13, 14 consisting of N+ layers are formed simultaneously on the surface of the substrate except a section under the mask layer 11, and the whole is thermally treated under the state in which the surface of the substrate is protected by the protective film 8. Accordingly, a MESFET can be manufactured through a simple manufacturing process while the surface of the substrate need not be etched in order to form a Schottky electrode, etc., the surface of the substrate is kept flat, and the disconnection of an electrode wiring can be removed.

Inventors:

NAKAMOTO HIROYUKI

Application Number:

JP11980283A

Publication Date:

January 19, 1985

Filing Date:

June 30, 1983

Export Citation:

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Assignee:

SANYO ELECTRIC CO

International Classes:

H01L29/812; H01L21/265; H01L21/338; H01L29/80; (IPC1-7): H01L29/80; H01L21/265

Attorney, Agent or Firm:

Takuji Nishino

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