PURPOSE: To improve the yield of the Schottky barrier type semiconductor device by forming an Au layer surrounding a mixer diode when covering the Au layer on a Schottky barrier electrode forming the mixer diode, using it for current path, and thereby equalizing the thickness of plated Au layer.
CONSTITUTION: An n type GaAs layer 22 is grown on an n+ type GaAs substrate 21, a PSG film 23 is coated thereon, and there are exposed the portion 22' of the layer 22 corresponding to the junction of the mixer diode and the region 22" having sufficient area for flowing a plating current. Then, it is etched, and a recess is formed thereon, electrodes 27 of Nb and Mo, Au for Schottky barrier are formed only on the region 22", are heat treated, and Nb alloy junction 28 is formed in the layer 22'. Thereafter, an Au layer 26' is coated on the whole surface while bringing it into contact with the side surface of the electrode 27, a junction 30 is formed in the region 20", and Au-Ga alloy layer 29 is covered on the back surface of the substrate 21. Thereafter, a current flows between the layer 29 and the junction 30, and Au-plated layer 26" is deposited on the surface of the electrode 27.
| WO/2012/049872 | SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING SAME |
| JP2013141000 | SEMICONDUCTOR DEVICE |
MURATA EIJI
IZUMI HIDEAKI
