PURPOSE: To enhance rectifying characteristics by doping an electron receiving compound from one surface of acetylene high polymer molded product with a specified bulk density, imparting conductivity gradient in the thickness direction, and depositing Al and the like on the low conductivity side.
CONSTITUTION: The molded product of acetylene high polymer is unstable if its bulk density is too high, and is hard to give an electric conductivity gradient if it is too low. Therefore, it is determined to be 0.7∼1.2g/cm3. The electron receiving compound such as halogen, metal halide, proton acid, and the like is introduced from one surface of nonporous high polymer molded product. The kind, the quantity, and the adding conditions of said electron receiving compound are selected, the conductivity is set at 10-9∼103/Ω.cm, and the gradient can be imparted to the electric conductivity ranging from a semiconductor region to a metallic region. Doping is performed at 200°C or less, a specified metal such as Al or the like is evaporated, and the conductivity of 10/Ω.cm or less is obtained on the evaporating side. Thereafter a metal is deposited in a conventional method, and the Schottky junction having excellent rectifying characteristics characterized by a large mechanical strength and good stabilization against oxidation can be obtained.
KIRA MASAAKI
YAMAGUCHI KANEYA
