Title:
MANUFACTURE OF SEMICONDUCTOR BASE MATERIAL
Document Type and Number:
Japanese Patent JP3112106
Kind Code:
B2
Abstract:
PURPOSE: To manufacture a high performance SOI base by holding a single crystalline epitaxially grown layer on a porous silicon at a supporting base via adhesive, selectively etching the base part, adhering only a thin film to a transparent insulating base, isolating the adhesive from the supporting base, and heat treating the thin film at a high temperature.
CONSTITUTION: A single crystalline silicon base 100 is anodized to form a porous silicon base 101, a porous single crystalline silicon layer 102 having a thickness of 2μm or less is epitaxially grown thereon, and coated with adhesive 103 to adhere a supporting base 110. Then, the layer 102 remains, the other is selectively etched, the exposed layer 102 is brought into close contact with a transparent insulating base 111 containing SiO2 as a main ingredient, the entire base is heated to melt the adhesive, and the base 110 is isolated. Thereafter, a rigid body of the base and the thin film in close contact with hydrogen-bond is heat treated at bout 1000°C to form an SOI base in which the thin film is not cracked or not peeled.
Inventors:
Kenji Yamakata
Takao Yonehara
Takao Yonehara
Application Number:
JP29225891A
Publication Date:
November 27, 2000
Filing Date:
October 11, 1991
Export Citation:
Assignee:
Canon Inc
International Classes:
H01L21/02; H01L21/20; H01L21/306; H01L21/762; H01L27/12; H01L31/18; (IPC1-7): H01L27/12; H01L21/02; H01L21/762
Domestic Patent References:
| JP5555568A |
Other References:
【文献】特許2608351(JP,B2)
Attorney, Agent or Firm:
Johei Yamashita