MANUFACTURE OF SEMICONDUCTOR DEVICE AND LIQUID CRYSTAL DISPLAY DEVICE

Title:

MANUFACTURE OF SEMICONDUCTOR DEVICE AND LIQUID CRYSTAL DISPLAY DEVICE

Document Type and Number:

Japanese Patent JPH05315362

Kind Code:

A

Abstract:

PURPOSE: To make a temperature distribution in a part to be annealed at the time of annealing uniform and to make a grain size of a crystal after annealing by forming a thin film having high transmission factor of a laser for annealing and high thermal conductivity on a semiconductor thin film.

CONSTITUTION: A method for manufacturing a semiconductor device to form a thin film transistor on a plastic film 4 comprises the steps of forming a semiconductor thin film 3 on the film 4 and crystallizing the film 3 by irradiating the film 3 with a pulse laser 2. In this case, a thin film 5 having a thermal conductivity K and a transmission factor T of the laser 2 for crystallization in ranges of K ≥0.03cal/cm.sec.°C, T ≥80% is previously formed on the film 3. For example, the film 5 is formed of a ceramic insulating material such as sapphire, etc., formed by a laser ablation method, and its ceramic insulating material is used for a gate insulating film of the transistor.

Inventors:

KUSUNOKI MASAMUNE
MORI KOJI
KONDO NOBUAKI

Application Number:

JP14625392A

Publication Date:

November 26, 1993

Filing Date:

May 12, 1992

Export Citation:

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Assignee:

RICOH KK

International Classes:

G02F1/136; G02F1/1368; H01L21/20; H01L21/336; H01L29/78; H01L29/786; (IPC1-7): H01L21/336; G02F1/136; H01L21/20; H01L29/784

Attorney, Agent or Firm:

Akinori Takano (1 person outside)

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