MANUFACTURE OF SEMICONDUCTOR DEVICE AND SEMICONDUCTOR DEVICE MANUFACTURED THEREBY

Title:

MANUFACTURE OF SEMICONDUCTOR DEVICE AND SEMICONDUCTOR DEVICE MANUFACTURED THEREBY

Document Type and Number:

Japanese Patent JP2000040675

Kind Code:

A

Abstract:

To provide a semiconductor device and a manufacturing method of the semiconductor device for adjusting a composition ratio of high m.p. metal silicide film on a surface of a silicon material in a CVD method and eliminating a difference in composition ratios and film characteristics in CVD chambers when a plurality of CVD chambers are used.

Tungsten hexafluoride (WF6) and dichlorosilane(DCS) are reacted in a CVD method on the surface of a polysilicon film doped in a water and a tungsten silicide (WSix) film a little rich in tungsten in generated. In this case, the dichlorosilane(DCS) only is carried in the reactive chamber for a given time, and the tungsten silicide (WSix) film rich in silicon is obtained by adjusted to a target component ratio of Si/W=2.6±0.1. Then, a difference in composition ratios and film characteristics of the tungsten silicide (WSix) film formed in each one-water processing chamber can be eliminated.

Inventors:

HAMAZAKI TETSUJI

Application Number:

JP20773998A

Publication Date:

February 08, 2000

Filing Date:

July 23, 1998

Export Citation:

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Assignee:

SONY CORP

International Classes:

C23C16/42; C23C16/52; H01L21/28; H01L21/285; H01L21/3205; H01L23/52; (IPC1-7): H01L21/285; C23C16/42; C23C16/52; H01L21/285; H01L21/3205

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