Title:
MANUFACTURE OF SEMICONDUCTOR DEVICE USING ANTIREFLECTION FILM
Document Type and Number:
Japanese Patent JPH11204392
Kind Code:
A
Abstract:
To provide a process for reducing reflection from a substrate for exposure, in a lithography process.
An antireflection(ARC) film 14 is formed on a substrate. An insulating film 15 is formed on the ARC film 14. A radiation sensitive film 17, which is a photoresist film, is formed on the insulating film 15. The radiation sensitive film 17 is exposed selectively. In this process, the ARC film 14 covers the lower surface of a part of the insulating film 15, on which the radiation sensitive film 17, is formed during the selective exposure. Reflection of radiation during the selective exposure of the radiation sensitive film 17 is reduced by the ARC film 14.
Inventors:
AZUMA TSUKASA
SATO TAKASHI
SATO TAKASHI
Application Number:
JP24986498A
Publication Date:
July 30, 1999
Filing Date:
September 03, 1998
Export Citation:
Assignee:
TOSHIBA CORP
International Classes:
G03F7/09; H01L21/027; H01L21/768; (IPC1-7): H01L21/027
Attorney, Agent or Firm:
Takehiko Suzue (6 outside)
Previous Patent: SEMICONDUCTOR MANUFACTURING EQUIPMENT AND DEVICE MANUFACTURE
Next Patent: PATTERN FORMATION
Next Patent: PATTERN FORMATION