Title:
MANUFACTURE OF SEMICONDUCTOR DEVICE
Document Type and Number:
Japanese Patent JP2000315646
Kind Code:
A
Abstract:
To eliminate effects of ununiformity of a lower wiring structure such as a step, etc., when a photoresist pattern is formed by electron beam linear drawing.
The patterning step for applying an electron beam is provided with a correction step for changing a way of irradiation (irradiation quantity and position) of the electron beam in the respective areas where the structural body of a first wiring layer 1 forming a lower wiring structure exists, in consideration of the structural body on alignment in advance. Information on the structural body uses an information which an alignment system for conducting the patterning step or its upper system holds to the present.
Inventors:
TSUGAWA AKIHIKO
Application Number:
JP12552099A
Publication Date:
November 14, 2000
Filing Date:
May 06, 1999
Export Citation:
Assignee:
NEC CORP
International Classes:
H01L21/768; G03F7/038; G03F7/039; G03F7/20; H01L21/027; (IPC1-7): H01L21/027; G03F7/038; G03F7/039; G03F7/20; H01L21/768
Attorney, Agent or Firm:
Noriaki Miyakoshi
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