Title:
MANUFACTURE OF SEMICONDUCTOR DEVICE
Document Type and Number:
Japanese Patent JP2785746
Kind Code:
B2
Abstract:
PURPOSE: To make it possible to increase thickness with higher aspect ratio and to form gold electrodes having a normally tapered cross section by selective electrolytic plating.
CONSTITUTION: A PSG film 13 as inorganic insulating film is grown on a semiconductor substrate 1 with barrier metal 4 in-between. In the PSG film 13, the ratio x of phosphoric acid in composition is continuously varied in the direction of depth so that a larger quantity of the phosphoric acid component will be present on the barrier metal side than on the surface side. A resist mask is formed using photoresist 5, and the PSG film 13 is subjected to isotropic plasma etching. The more the phosphoric acid component is contained, the more easily the PSG film 13 is etched. Therefore, the PSG film 13 is largely side-etched and thus patterned into a reversely tapered shape. Thereafter, selective electrolytic plating is performed using the PSG film 13 as a mask to form gold electrodes having a normally tapered cross section.
Inventors:
SAITO YOSHIHARU
Application Number:
JP14612295A
Publication Date:
August 13, 1998
Filing Date:
June 13, 1995
Export Citation:
Assignee:
NIPPON DENKI KK
International Classes:
C23F4/00; C25D7/12; H01L21/288; H01L21/3205; (IPC1-7): H01L21/288; C23F4/00; H01L21/3205
Domestic Patent References:
| JP2228031A | ||||
| JP358433A | ||||
| JP684908A |
Attorney, Agent or Firm:
Wakabayashi Tadashi