Title:
MANUFACTURE OF SEMICONDUCTOR DEVICE
Document Type and Number:
Japanese Patent JP3156389
Kind Code:
B2
Abstract:
PURPOSE: To avoid the bad influence of voids in an insulating film by coating a specified layer insulating film of a semiconductor chip selectively with electrode wiring and coating it after that with a first insulating film having possible voids, and forming a second insulating film by spin coating and burying the voids substantially.
CONSTITUTION: Baking is performed for about 40 seconds with a hot plate of a temperature 100°C, and in this way a positive type photoresist film 6 having a thickness of about 4μm at its flat part is formed. In this forming process, air comes out of horizontal holelike voids 51 and bubbles 7 are produced. Besides, the entrance vicinities of the horizontal holelike voids are buried with the positive type photoresist film. HMDS PROCESSING, spin coating of positive type photoresist, and baking at 100°C are performed again, and a positive type photoresist film 8 is formed. Consequently, it becomes possible to form cover films and layer insulating films without damages caused by the voids of a first insulating film.
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Inventors:
Shozo Nishimoto
Application Number:
JP25444392A
Publication Date:
April 16, 2001
Filing Date:
September 24, 1992
Export Citation:
Assignee:
NEC
International Classes:
H01L21/318; H01L21/3205; H01L21/3213; (IPC1-7): H01L21/318
Domestic Patent References:
| JP1321658A | ||||
| JP2174250A |
Attorney, Agent or Firm:
Naoki Kyomoto (2 outside)