Title:
MANUFACTURE OF SEMICONDUCTOR DEVICE
Document Type and Number:
Japanese Patent JP3166743
Kind Code:
B2
Abstract:
PROBLEM TO BE SOLVED: To form an epitaxial film without a defect.
SOLUTION: In a method for manufacturing a semiconductor device with a process of removing foreign substances, an SiGe epitaxial base 7 is grown on a single-crystal silicon substrate 1 in an opening 5 formed by dry etching. For removing foreign substances, after the dry etching and before the growth of the SiGe epitaxial base 7, a substrate to be grown is heated in an atmosphere of oxygen and dry etched for completely removing carbon base adherents 10 deposited on a silicon oxide film 2. In this way, an epitaxial film is formed without a defect.
Inventors:
Toru Aoyama
Application Number:
JP36090298A
Publication Date:
May 14, 2001
Filing Date:
December 18, 1998
Export Citation:
Assignee:
NEC
International Classes:
H01L21/302; C30B29/06; H01L21/205; H01L21/3065; (IPC1-7): H01L21/205; C30B29/06; H01L21/3065
Domestic Patent References:
| JP6423538A | ||||
| JP63222416A | ||||
| JP4304635A | ||||
| JP63129630A |
Attorney, Agent or Firm:
Naka Kanno