Title:
MANUFACTURE OF SEMICONDUCTOR DEVICE
Document Type and Number:
Japanese Patent JPH01143337
Kind Code:
A
Abstract:
PURPOSE:To enable the position of channel stopper to be accurate by forming the second non-oxidizable layer while covering the first non-oxidizable layer formed selectively, by allowing the second non-oxidizable layer to be transmitted, and introducing impurities with the first non-oxidizable layer as a mask. CONSTITUTION:An SiO2 film 21, an Si3N4 film 22, and an SiO2 film 23 are formed on an element-forming area of an Si substrate 11 to form the first non-oxidizable film. Then, an Si3N4 film 24 is formed over the entire surface as the second non-oxidizable film and impurities 26 for channel stopper are introduced through the film 24. Then, an SiO2 film 25 is formed over the entire surface and etched back to form the side wall of the first non-oxidizable film. The RIE is performed to the film 24 with this side wall as a mask and the sectional area of film 24 is configured in L shape. After eliminating the film 25, the LOCOS is performed and an SiO2 film for separating elements 2 is formed. Then, the offset amount of the channel stopper 13 from an element formation area 14 can be controlled accurately. Also, a birds' beak 12a can be made smaller.
Inventors:
ITO MASAHIKO
Application Number:
JP30253987A
Publication Date:
June 05, 1989
Filing Date:
November 30, 1987
Export Citation:
Assignee:
SONY CORP
International Classes:
H01L21/316; H01L21/76; (IPC1-7): H01L21/76; H01L21/94
Attorney, Agent or Firm:
Tsuchiya Masaru
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