Title:
MANUFACTURE OF SEMICONDUCTOR DEVICE
Document Type and Number:
Japanese Patent JPH01169966
Kind Code:
A
Abstract:
PURPOSE:To manufacture a superconductive FET by a simple process by forming a material layer for a superconductive electrode on a substrate, shaping source-drain layers and bringing the material layer to a superconductive material through heat treatment in an oxygen atmosphere. CONSTITUTION:An insulating film 2 is formed on a GaAs substrate 1, and a gate electrode 4, a drain electrode 3 and a source electrode 5 are formed. These electrodes are formed by a Ba-Y-Cu group material. A source region 7 and a drain region 8 are formed through ion implantation. The Ba-Y-Cu group material constituting the electrodes is oxidized through heat treatment in an oxygen atmosphere, and converted into a Ba-Y-Cu-O group having superconductive characteristics. Accordingly, a superconductive FET having excellent characteristics can be manufactured by a simple process.
Inventors:
HOSHINA JUNICHI
OGURA MOTOTSUGU
OGURA MOTOTSUGU
Application Number:
JP32858087A
Publication Date:
July 05, 1989
Filing Date:
December 24, 1987
Export Citation:
Assignee:
MATSUSHITA ELECTRIC IND CO LTD
International Classes:
H01L29/43; H01L21/28; H01L21/336; H01L29/78; H01L39/24; (IPC1-7): H01L29/46; H01L29/78; H01L39/24
Attorney, Agent or Firm:
Toshio Nakao (1 outside)