MANUFACTURE OF SEMICONDUCTOR DEVICE

Japanese Patent JPH01264239

A

PURPOSE: To form a multilayer-film wiring layer of high reliability by a method wherein a first Al film which has been used as a mask is left as it is and a barrier metal layer and a second Al film are formed one after another on it.

CONSTITUTION: An insulating film 102 is formed on an Si substrate 101; a first Al film 103 is formed on it. Then, an opening part is formed in the first Al film 103; the insulating film 102 is dry-etched by making use of the Al film 103 as a mask; a contact hole 104 is made. Then, a TiN film, a Ti film, a Ta film or a W film is formed as a barrier metal layer 105. After that, a second Al film 106 is formed; a wiring layer of a three-layer film is formed in a part other than a two-layer film composed of the barrier metal layer 105 and the second Al layer 106 which cover the contact hole 104. Accordingly, Si is not precipitated in the second Al film 106; it is possible to prevent an increase in a contact resistance; it is possible to prevent a disconnection due to electromigration; the reliability of the wiring layer can be enhanced.

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SUDO ITSUKI
KURE TOKUO
NISHIDA TAKASHI
KADOTA SHINICHIRO

JP9154988A

October 20, 1989

April 15, 1988

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HITACHI LTD

H01L23/52; H01L21/28; H01L21/3205; H01L21/768; (IPC1-7): H01L21/28; H01L21/88; H01L21/90

Katsuo Ogawa (1 person outside)

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