MANUFACTURE OF SEMICONDUCTOR DEVICE

Japanese Patent JPH02153534

A

PURPOSE: To prevent the generation of a short-circuit between a conductive film for emitter lead-out use and a conductive film for base lead-out use and an increase in a base resistance by a method wherein a second insulating film is formed by deposition on a first conductor film and this second insulating film is used as an insulating film between the conductive film for emitter lead- out use and the conductive film for base lead-out use.

CONSTITUTION: A poly silicon film 8 is formed on a silicon nitride film 7, which is used as a non-oxidizable insulating film, as a first conductor film. Then, boron is ion-implanted in the film 8 on a prescribed condition and a CVD silicon oxide film 9 is laminated in order and adhered as a second insulating film. This film 9 is used as an insulating film for insulating a poly silicon film for emitter lead-out use and a poly silicon film for base lead-out use from each other. As this film 9 is formed by a CVD method, it can be made thick sufficiently and can discharge favorably an insulating function. Moreover, as the film 9 does not affect the thickness of the film 8, an increase in a base resistance is inhibited.

JPS55157271	SEMICONDUCTOR DEVICE
JPS60207372	MANUFACTURE OF BIPOLAR TYPE SEMICONDUCTOR DEVICE
JPS5999769	SEMICONDUCTOR DEVICE

NAKAJIMA HIROOMI
YAMAGUCHI TOSHIO
ITO NOBUYUKI
TSUKIOKA HIDEAKI
NIHEI HIROYUKI
TAKADA HIDEKI
KATSUMATA YASUHIRO
HIRAKAWA KENJI
KO TATSUICHI

JP30690088A

June 13, 1990

December 06, 1988

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TOSHIBA CORP

H01L29/73; H01L21/033; H01L21/225; H01L21/285; H01L21/331; H01L29/732; (IPC1-7): H01L21/331; H01L29/73

JPS61283167A	1986-12-13
JPS5843539A	1983-03-14
JPS5850755A	1983-03-25

Hideaki Tokawa (1 outside)

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