MANUFACTURE OF SEMICONDUCTOR DEVICE

Title:

MANUFACTURE OF SEMICONDUCTOR DEVICE

Document Type and Number:

Japanese Patent JPH0236525

Kind Code:

A

Abstract:

PURPOSE: To enhance the reliability and the yield by a method wherein a semiconductor substrate is ion-implanted with tetravalent atoms simultaneously with ion implantation with P-type impurity or before or after the ion implantation to be annealed after ion implantation with P-type impurity and tetravalent atoms.

CONSTITUTION: After removing a silicon nitride film 6 and a silicon oxide film 5 in a base contact groove part, another silicon oxide film 8 and a non- doped polysilicon 7 on an emitter formation region are removed. Then, the surface is ion-implanted with Si atoms or Ge atoms. Thus, the graft base formation region immediately below the base groove is made amorphous. Next, B atoms are ion-implanted with low accelerating energy in the emitter formation region whereto any remaining silicon nitride film 6 and the silicon oxide film 5 are exposed to be annealed later. Through these procedures, graft bases 10 are formed.

Inventors:

UDA HIDE
OWADA NOBUO
KAMATA TADASHI

Application Number:

JP18561688A

Publication Date:

February 06, 1990

Filing Date:

July 27, 1988

Export Citation:

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Assignee:

HITACHI LTD

International Classes:

H01L29/73; H01L21/265; H01L21/331; H01L29/732; (IPC1-7): H01L21/265; H01L21/331; H01L29/73

Attorney, Agent or Firm:

Katsuo Ogawa (1 person outside)

Next Patent: JPH0236526