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Patent Searching and Data


Title:
MANUFACTURE OF SEMICONDUCTOR DEVICE
Document Type and Number:
Japanese Patent JPH0245923
Kind Code:
A
Abstract:
PURPOSE: To obtain a metal silicide top layer of Si regions by depositing Co or Ni as a metal on the surface and heating a semiconductor body up to a temp. for forming Co disilicide or Ni disilicide to avoid overgrowth of the metal silicide. CONSTITUTION: A metal is deposited on a structure 2 and a semiconductor body 1 is heated up to a temp. enough to react the metal with Si regions 3, 4, 5, 6 during this depositing to form a metal silicide layer 10 on the regions 3-6. Thus the Si regions 3, 4, 5 can be made to satisfactorily form contacts. The region 6 also provides a low electric resistance. This avoids overgrowing the metal silicide and a metal silicide top layer of the Si regions is obtd.

Inventors:
IBO YOHANESU MECHIRUDASU MARIA
Application Number:
JP16281389A
Publication Date:
February 15, 1990
Filing Date:
June 27, 1989
Export Citation:
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Assignee:
PHILIPS GLOEILAMPENFAB:NV
International Classes:
H01L29/78; H01L21/28; H01L21/285; H01L21/336; H01L21/768; (IPC1-7): H01L21/28; H01L21/336; H01L29/784