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Title:
MANUFACTURE OF SEMICONDUCTOR DEVICE
Document Type and Number:
Japanese Patent JPH0273627
Kind Code:
A
Abstract:

PURPOSE: To prevent a junction leakage, a shortage of an effective channel length and to highly integrate a semiconductor device by irradiating the main face of a substrate formed with a semiconductor region with energy pulse beams from a plurality of directions to be heat treated.

CONSTITUTION: A gate electrode 4 is selectively formed on a semiconductor substrate 1 formed with an element isolating region 3 and a gate oxide film 2. Then, with the electrode 4 as a mask an ion implantation is conducted to form a region 5 to be ion implanted. Thereafter, a heat treatment using an excimer laser pulse beam as an energy pulse beam is conducted to activate the region 5, thereby forming a source region 6 and a drain region 7. In this case, a radiating direction is inclined at an angle θ with respect to the vertical line X of the substrate, and a radiation light source is rotated at a vertical line X' passing the center of the electrode 4 as an axis. Thus, a beam is extremely locally and uniformly emitted to prevent a junction leakage, a shortage of an effective channel length, and to highly integrate it.


Inventors:
Noguchi, Takashi
Nishiyama, Kazuo
Application Number:
JP1988000225321
Publication Date:
March 13, 1990
Filing Date:
September 08, 1988
Export Citation:
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Assignee:
SONY CORP
International Classes:
H01L27/04; H01L21/22; H01L21/265; H01L21/268; H01L21/336; H01L21/822; H01L29/78; (IPC1-7): H01L21/22; H01L21/265; H01L21/268; H01L21/336; H01L27/04; H01L29/784
Domestic Patent References:
JPS54161267A
JPS55150238A



 
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