MANUFACTURE OF SEMICONDUCTOR DEVICE

Title:

MANUFACTURE OF SEMICONDUCTOR DEVICE

Document Type and Number:

Japanese Patent JPH03142925

Kind Code:

A

Abstract:

PURPOSE: To make it possible to obtain a flat wiring by a method wherein two layers of interlayer insulating films are deposited and after a tungsten layer is formed in a contact hole, the second layer inter-layer insulating film adhered with an unnecessary part of the tungsten-layer is removed and the wiring is formed on the first layer interlayer insulating film.

CONSTITUTION: A second insulator film 104 different from a first insulator film 103 is formed on the insulator film 103 formed on a semiconductor substrate 101. The insulator films 103 and 104 are etched to form a contact hole, a tungsten layer 105 is formed in this hole and the insulator film 104 is etched and removed. Then, a conductor layer 106 is formed on the insulator film 103 and an etching is performed to form a wiring. Thereby, a flat wiring can be formed.

Inventors:

EGUCHI YOSHIKAZU

Application Number:

JP28237489A

Publication Date:

June 18, 1991

Filing Date:

October 30, 1989

Export Citation:

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Assignee:

SEIKO EPSON CORP

International Classes:

H01L21/3205; H01L21/28; H01L21/768; (IPC1-7): H01L21/28; H01L21/3205; H01L21/90

Attorney, Agent or Firm:

Kisaburo Suzuki (1 outside)

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