Title:
MANUFACTURE OF SEMICONDUCTOR DEVICE
Document Type and Number:
Japanese Patent JPH0547756
Kind Code:
A
Abstract:
PURPOSE: To form a metallic wiring of a fine structure on a semiconductor device by a selective growth method.
CONSTITUTION: The first metal film 2 and a dummy conductive layer are laminated on an insulating film 1 on a semiconductor substrate 10. Then this laminated body is etched into a form of wiring. Spacers 8 of insulator are formed on the sidewalls of the laminated body, and then the dummy conductive layer is removed by etching. Finally, the second metal film 6 is embedded in the region enclosed with the spacers 8 and the first metal film 2, forming an interconnection of a two-layer structure.
Inventors:
SHIBATA HIDEKI
Application Number:
JP22538191A
Publication Date:
February 26, 1993
Filing Date:
August 12, 1991
Export Citation:
Assignee:
TOSHIBA CORP
International Classes:
H01L21/28; H01L21/3205; H01L23/52; (IPC1-7): H01L21/28; H01L21/3205
Attorney, Agent or Firm:
Toshi Takemura