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Title:
MANUFACTURE OF SEMICONDUCTOR DEVICE
Document Type and Number:
Japanese Patent JPH0590196
Kind Code:
A
Abstract:

PURPOSE: To provide a method of manufacturing a semiconductor device, which is provided with a highly reliable contact hole of a high aspect ratio and has good characteristics.

CONSTITUTION: A P-type high-concentration diffused layer 13 is formed in a semiconductor silicon substrate 11. Then, a BPSG film 12 which is an interlayer insulating film is formed and a contact hole 14 is formed in this film 12. Then, a silicon nitride film 15 is formed on the film 12. The film 15 on the film 12 part other than the sidewall of the hole 14 is removed. Then, a polysilicon film 16 is deposited in the hole 14. After this, ions 17 are implanted and a heat treatment is executed.


Inventors:
Anzai, Kenji
Murai, Ichiro
Egawa, Yuichi
Application Number:
JP1991000250922
Publication Date:
April 09, 1993
Filing Date:
September 30, 1991
Export Citation:
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Assignee:
NIPPON STEEL CORP
International Classes:
H01L21/28; (IPC1-7): H01L21/28
Attorney, Agent or Firm:
八田 幹雄 (外2名)



 
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