Title:
MANUFACTURE OF SEMICONDUCTOR DEVICE
Document Type and Number:
Japanese Patent JPH06209049
Kind Code:
A
Abstract:
PURPOSE: To carry out an oxidization step for a silicide without a structural defect at a polysilicon gate, by oxidizing a polycide structure made up of a gate insulating film, a first conductive layer containing silicon and a silicide layer on a semiconductor substrate in an atmosphere of oxygen and hydrogen chloride. CONSTITUTION: A gate oxide film 22 is formed on a semiconductor substrate 21. A first conductive layer 23 that includes polysilicon and single crystal silicon is formed thereon. A silicide layer 24 is formed on the first conductive layer 23. The wafer with a polycide structure is loaded in a reactive container. The wafer is oxidized in a dry state in an atmosphere of oxygen and hydrogen chloride for a given time to form a silicon oxide layer 25 on the silicide layer 24. During the oxidization of the silicide layer 24, the oxidization step is stabilized by oxygen and hydrogen chloride, and the consumption of silicon is kept constant, and thereby a structural defect on the surface of the first conductive layer can be prevented.
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Inventors:
KIN SHIYUKAN
Application Number:
JP23781493A
Publication Date:
July 26, 1994
Filing Date:
September 24, 1993
Export Citation:
Assignee:
SAMSUNG ELECTRONIC
International Classes:
H01L21/3205; H01L21/768; H01L23/52; H01L29/78; H01L21/316; (IPC1-7): H01L21/90; H01L21/316; H01L21/3205; H01L29/784
Attorney, Agent or Firm:
Kobori Masashi