Title:
MANUFACTURE OF SEMICONDUCTOR DEVICE
Document Type and Number:
Japanese Patent JPH06244183
Kind Code:
A
Abstract:
PURPOSE: To provide a semiconductor device manufacturing method by which a TiN or TiON film can be used as a reflection preventing film by increasing the etch selectivity of the TiN or TiON film against an interlayer insulating film and suppressing the progress of etching of the TiN or TiON film at the time of forming a contact hole.
CONSTITUTION: A reflection preventing film composed of a TiN (or TiON) film 3 is formed on a lower wiring layer 2 formed on a semiconductor substrate 1 by performing reactive sputtering while the substrate 1 is maintained at 250-300°C.
Inventors:
MIYAKI TORU
SUZUKI KATSUNORI
SUZUKI KATSUNORI
Application Number:
JP2661993A
Publication Date:
September 02, 1994
Filing Date:
February 16, 1993
Export Citation:
Assignee:
KAWASAKI STEEL CO
International Classes:
H01L21/28; H01L21/302; H01L21/3065; H01L21/3205; H01L23/52; (IPC1-7): H01L21/3205; H01L21/28; H01L21/302
Attorney, Agent or Firm:
Tetsuya Mori (2 others)
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