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Title:
MANUFACTURE OF SEMICONDUCTOR DEVICE
Document Type and Number:
Japanese Patent JPH0685310
Kind Code:
A
Abstract:

PURPOSE: To reduce the leakage current from a photodiode.

CONSTITUTION: A channel stopper layer 13 is formed on a silicon substrate 11. A titanium film 14 is formed thereon using a photoresist layer 15 as a mask. An n-type diffusion layer 12 is formed by ion implantation. Thereafter, the titanium film 14 is selectively left. An oxide film 18 is formed, and a heat treatment is performed. The titanium film 14 is turned into a titanium silicide layer 17 through the heat treatment.


Inventors:
Fujii, Shinji
Application Number:
JP1992000233425
Publication Date:
March 25, 1994
Filing Date:
September 01, 1992
Export Citation:
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Assignee:
MATSUSHITA ELECTRON CORP
International Classes:
H01L21/28; H01L21/265; H01L27/08; H01L31/10; (IPC1-7): H01L31/10; H01L21/265; H01L21/28; H01L27/08
Attorney, Agent or Firm:
小鍜治 明 (外2名)



 
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