MANUFACTURE OF SEMICONDUCTOR DEVICE

Title:

MANUFACTURE OF SEMICONDUCTOR DEVICE

Document Type and Number:

Japanese Patent JPH07307307

Kind Code:

A

Abstract:

PURPOSE: To provide a manufacturing method for stably forming a high concentration diffusion region, by improving the alignment precision of a source drain, in structure wherein the source drain which is effective in a fine MOS transistor is formed on a semiconductor substrate.

CONSTITUTION: A field oxide film 12 and a gate electrode 6 are formed. A low concentration diffusion region 8 is formed in a semiconductor substrate. A side wall is formed on the gate electrode 6. A source drain 3 is formed on the whole surface. Photosensitive resin 1 is formed on the whole surface by a spin coating method, and then subjected to ashing in an oxygen atmosphere. Only on the low concentration diffusion region 8, the photosensitive resin 1 is patterned in the self-alignment manner. The source drain 3 is patterned by applying the photosensitive resin 1 to an etching mask. Hence the source drain 3 can be formed without alignment error.

Inventors:

YANO YUISUKE

Application Number:

JP10139694A

Publication Date:

November 21, 1995

Filing Date:

May 16, 1994

Export Citation:

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Assignee:

CITIZEN WATCH CO LTD

International Classes:

H01L21/28; H01L21/265; H01L21/302; H01L21/3065; H01L21/316; H01L21/3213; H01L29/78; (IPC1-7): H01L21/28; H01L21/265; H01L21/3065; H01L21/316; H01L21/3213; H01L29/78

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