Title:
MANUFACTURE OF SEMICONDUCTOR DEVICE
Document Type and Number:
Japanese Patent JPH08330296
Kind Code:
A
Abstract:
PURPOSE: To obtain a highly reliable semiconductor device by preventing bubbles from being formed in a narrow valley between wiring layers in formation of a polyimide insulation film.
CONSTITUTION: An electrode material is applied onto an insulation film. A resist mask 22 is formed thereon and a first wiring layer 23 having a tilting side wall 25 by isotropic etching and an approximately vertical side wall 24 by anisotropic etching is formed. A silicon nitride film 26 is formed thereon and a polyimide insulation film 27 is formed by a spin on application method.
Inventors:
HATSUYA AKIRA
Application Number:
JP13450795A
Publication Date:
December 13, 1996
Filing Date:
May 31, 1995
Export Citation:
Assignee:
SANYO ELECTRIC CO
International Classes:
H01L21/768; H01L21/312; H01L23/522; (IPC1-7): H01L21/312; H01L21/768
Attorney, Agent or Firm:
Kei Okada
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