Title:
MANUFACTURE OF SEMICONDUCTOR DEVICE
Document Type and Number:
Japanese Patent JPH09223737
Kind Code:
A
Abstract:
To form a highly flat layer insulating film with any absolute step removed.
Sequentially formed on a semiconductor substrate 1 are a silicon oxide film 2, an aluminum wiring pattern layer 3, and thereafter, for example, by a chemical vapor deposition(CVD) process of an electron cyclotron resonance(ECR) type, a first silicon oxide film 4 of a low polishing rate, a second silicon oxide film 5 of a high polishing rate, and then a third silicon oxide film 6 of a low polishing rate. A difference between the high and low polishing rates is made by changing a flow ratio between O2 and SiH4 in a reactive gas. The polishing is carried out by chemical-unechanical polishing(CMP) to obtain a flat layer insulating film.
Inventors:
SUZUKI MIEKO
Application Number:
JP2889396A
Publication Date:
August 26, 1997
Filing Date:
February 16, 1996
Export Citation:
Assignee:
NEC CORP
International Classes:
H01L21/306; H01L21/3105; H01L21/316; H01L21/768; H01L21/31; H01L23/522; (IPC1-7): H01L21/768; H01L21/306; H01L21/316; H01L21/31
Domestic Patent References:
| JPH07297193A | 1995-11-10 | |||
| JPH06310504A | 1994-11-04 | |||
| JPS6441244A | 1989-02-13 |
Attorney, Agent or Firm:
Yusuke Omi