MANUFACTURE OF SEMICONDUCTOR DEVICE

Title:

MANUFACTURE OF SEMICONDUCTOR DEVICE

Document Type and Number:

Japanese Patent JPH10189573

Kind Code:

A

Abstract:

To provide a method of manufacturing a semiconductor device capable of forming an isolation region of micro size hard to form by DUV(deep ultra violet) wavelength.

An antioxidant layer 23 covering the top surface of a semiconductor substrate 21 is formed and an oxidizing layer 26 covering the antioxidant layer 23 is formed. A part of the above mentioned antioxidant layer 23 is exposed in selectively removing a part of the oxidizing layer 26, an oxidized film 27 is formed by oxidizing the antioxidant layer, and the exposed region of the antioxidant layer 23 is decreased. The exposed region of the antioxidant layer 23 is removed by masking of the oxidized film 27 and the first region 28 of the semiconductor substrate determining the second region 29, device activation region, is exposed.

Inventors:

YOUN KANG-SIK
YOUN KI-SEOG
JOUNG KU-CHUL

Application Number:

JP34091097A

Publication Date:

July 21, 1998

Filing Date:

December 11, 1997

Export Citation:

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Assignee:

LG SEMICON CO LTD

International Classes:

H01L21/32; H01L21/76; H01L21/316; (IPC1-7): H01L21/316; H01L21/76

Attorney, Agent or Firm:

Fumio Sasashima (1 person outside)

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